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RB558VA150FH - Schottky Barrier Diode

Key Features

  • lExternal Dimensions(Unit : mm) 1.3±0.05 0.17±0.1 　　 0.05 for lLand Size Figure(Unit : mm) 1.1 1.9±0.1 2.5±0.2 0.8 0.5 2.0 1)Small power mold type. (TUMD2) 2)High reliability 3)AEC-Q101 qualified ed lConstruction end ns Silicon epitaxial TUMD2 lStructure 0.8±0.05 ROHM : TUMD2 Manufacture Date 0.6±0.2 　　　 0.1 lTaping Dimensions(Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.1 　　　　　 0 0.25±0.05 1.75±0.1 commDesig 1.43±0.05 e w lAbsolute Maximum Ratings(Ta=25°C) R e Parameter Reverse voltage.

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Datasheet Details

Part number RB558VA150FH
Manufacturer ROHM
File Size 1.44 MB
Description Schottky Barrier Diode
Datasheet download datasheet RB558VA150FH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet Schottky Barrier Diode RRBB5585V8VAA15105F0H AEC-Q101 Qualified lApplications General rectification lFeatures lExternal Dimensions(Unit : mm) 1.3±0.05 0.17±0.1 　　 0.05 for lLand Size Figure(Unit : mm) 1.1 1.9±0.1 2.5±0.2 0.8 0.5 2.0 1)Small power mold type.(TUMD2) 2)High reliability 3)AEC-Q101 qualified ed lConstruction end ns Silicon epitaxial TUMD2 lStructure 0.8±0.05 ROHM : TUMD2 Manufacture Date 0.6±0.2 　　　 0.1 lTaping Dimensions(Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.1 　　　　　 0 0.25±0.05 1.75±0.1 commDesig 1.43±0.05 e w lAbsolute Maximum Ratings(Ta=25°C) R e Parameter Reverse voltage (repetitive) t N Reverse voltage (DC) o Average rectified forward current (*1) NForward current surge peak (60Hz1cyc) Symbol VRM VR Io IFSM 4.0±0.1 Limits 150 150 0.5 3 φ 1.