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Rohm Semiconductor Electronic Components Datasheet

RD3G400GN Datasheet

Power MOSFET

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RD3G400GN
  Nch 40V 40A Power MOSFET
   Datasheet
lOutline
VDSS
40V
 
RDS(on)(Max.)
7.5mΩ
DPAK
ID
±40A
TO-252
PD
26W
 
      
lFeatures
1) Low on - resistance
2) High power package (TO-252)
3) Pb-free lead plating ; RoHS compliant
4) Halogen free
lInner circuit
lPackaging specifications
Packing
Reel size (mm)
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
VDSS
ID*1
IDP*2
VGSS
IAS*3
EAS*3
PD*1
Tj
Tstg
40
±40
±80
±20
20
3.1
26
150
-55 to +150
Embossed
Tape
330
16
2500
TL
RD3G400GN
Unit
V
A
A
V
A
mJ
W
                                                                                        
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
1/11
20170824 - Rev.002    


Rohm Semiconductor Electronic Components Datasheet

RD3G400GN Datasheet

Power MOSFET

No Preview Available !

RD3G400GN
          
lThermal resistance
Parameter
Thermal resistance, junction - case
                Datasheet
                    
Symbol
RthJC*1
Values
Unit
Min. Typ. Max.
-
- 4.8 /W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = 40V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = VGS , ID = 1mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
RDS(on)*4 VGS = 10V, ID = 40A
VGS = 4.5V, ID = 40A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 5V, ID = 20A
Values
Unit
Min. Typ. Max.
40 -
-
V
- 26.2 - mV/
-
-
1 μA
-
- ±500 nA
1.0 - 2.5 V
- -4.9 - mV/
- 5.6 7.5
- 7.0 9.5
- 2.0 -
Ω
20 -
-
S
*1 Tc=25, Limited only by maximum temperature allowed.
*2 Pw10μs , Duty cycle1%
*3 L 0.01mH, VDD = 20V, RG = 25Ω, Starting Tj = 25Fig.3-1,3-2
*4 Pulsed
                                             
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20170824 - Rev.002


Part Number RD3G400GN
Description Power MOSFET
Maker ROHM
PDF Download

RD3G400GN Datasheet PDF






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