RD3G600GN
Nch 40V 60A Power MOSFET
Datasheet l Outline
VDSS
40V
RDS(on)(Max.)
3.6mΩ
DPAK
±60A
TO-252
40W
l Features 1) Low on
- resistance 2) High power package (TO-252) 3) Pb-free plating ; Ro HS pliant 4) Halogen free l Inner circuit l Packaging specifications Packing
Reel size (mm) l Application Switching
Type Tape width (mm) Quantity (pcs)
Taping code
Marking l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain
- Source voltage Continuous drain current Pulsed drain current Gate
- Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation Junction temperature Operating junction and storage temperature range
VDSS ID- 1 IDP- 2 VGSS IAS- 3 EAS- 3 PD- 1 Tj Tstg
40 ±60 ±120 ±20 60 70 40 150 -55 to +150
Embossed Tape 330 16 2500 TL
Unit V A A V A m J W
℃ ℃
.rohm.
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