RD3H045SP
lThermal resistance
Parameter
Thermal resistance, junction - case
Datasheet
Symbol
RthJC*3
Values
Unit
Min. Typ. Max.
-
- 8.33 ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = -1mA
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID = -1mA
ΔTj referenced to 25℃
Zero gate voltage
drain current
IDSS VDS = -45V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = -10V , ID = -1mA
ΔVGS(th) ID = -1mA
ΔTj referenced to 25℃
Static drain - source
on - state resistance
VGS = -10V, ID = -4.5A
RDS(on)*4 VGS = -4.5V, ID = -4.5A
VGS = -4.0V, ID = -4.5A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = -10V, ID = -4.5A
Values
Unit
Min. Typ. Max.
-45 -
-
V
- -50 - mV/℃
-
- -1 μA
-
- ±10 μA
-1.0 - -3.0 V
- 3.3 - mV/℃
- 110 155
- 160 225 mΩ
- 185 260
- 7.7 -
Ω
3.0 -
-
S
*1 Limited only by maximum temperature allowed.
*2 Pw≦10μs , Duty cycle≦1%
*3 TC=25℃
*4 Pulsed
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2/12
20180608 - Rev.004
