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Rohm Semiconductor Electronic Components Datasheet

RD3L050SN Datasheet

Power MOSFET

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RD3L050SN
  Nch 60V 5A Power MOSFET
   Datasheet
lOutline
VDSS
60V
 
RDS(on)(Max.)
109mΩ
DPAK
ID
±5.0A
TO-252
PD
15W
 
      
lFeatures
1) Low on - resistance
2) Fast switching speed
3) Drive circuits can be simple
4) Parallel use is easy
5) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Tape width (mm)
Type Basic ordering unit (pcs)
16
2500
TL
Taping code
TL1
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
RD3L050SN
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
60
V
Continuous drain current
ID*1
±5.0
A
Pulsed drain current
IDP*2
±15
A
Gate - Source voltage
VGSS
±20
V
Power dissipation
PD*3
15
W
Junction temperature
Tj
150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
1/12
20180615 - Rev.004    


Rohm Semiconductor Electronic Components Datasheet

RD3L050SN Datasheet

Power MOSFET

No Preview Available !

RD3L050SN
          
lThermal resistance
Parameter
Thermal resistance, junction - case
                Datasheet
                    
Symbol
RthJC*3
Values
Unit
Min. Typ. Max.
-
- 8.33 /W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = 60V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V , ID = 1mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
VGS = 10V, ID = 5.0A
RDS(on)*4 VGS = 4.5V, ID = 5.0A
VGS = 4.0V, ID = 5.0A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 10V, ID = 5.0A
Values
Unit
Min. Typ. Max.
60 -
-
V
- 63.7 - mV/
-
-
1 μA
-
- ±10 μA
1.0 - 3.0 V
- -4.4 - mV/
- 78 109
- 94 131 mΩ
- 100 140
- 6.3 -
Ω
3.5 -
-
S
*1 Limited only by maximum temperature allowed.
*2 Pw10μs , Duty cycle1%
*3 TC=25
*4 Pulsed
                                             
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2/12
                                          
20180615 - Rev.004


Part Number RD3L050SN
Description Power MOSFET
Maker ROHM
PDF Download

RD3L050SN Datasheet PDF






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