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Rohm Semiconductor Electronic Components Datasheet

RD3P050SNFRA Datasheet

Power MOSFET

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RD3P050SNFRA
  Nch 100V 5A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
100V
190mΩ
±5.0A
15W
lFeatures
1) Low on - resistance
2) Fast switching speed
3) Drive circuits can be simple
4) Parallel use is easy
5) Pb-free lead plating ; RoHS compliant
6) AEC-Q101 Qualified
lOutline
DPAK
TO-252
 
      
lInner circuit
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Quantity (pcs)
16
2500
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
RD3P050SN
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
100 V
Continuous drain current
ID*1 ±5.0 A
Pulsed drain current
IDP*2 ±20 A
Gate - Source voltage
VGSS
±20 V
Power dissipation
PD*3 15 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20190527 - Rev.002    


Rohm Semiconductor Electronic Components Datasheet

RD3P050SNFRA Datasheet

Power MOSFET

No Preview Available !

RD3P050SNFRA
          
lThermal resistance
Parameter
Thermal resistance, junction - case
                Datasheet
                    
Symbol
RthJC*3
Values
Min. Typ. Max.
- - 8.33
Unit
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = 100V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V , ID = 1mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
VGS = 10V, ID = 5.0A
RDS(on)*4 VGS = 4.5V, ID = 5.0A
VGS = 4.0V, ID = 5.0A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 10V, ID = 5.0A
Values
Unit
Min. Typ. Max.
100 - - V
- 116.9 - mV/
- - 10 μA
- - ±10 μA
1.0 - 2.5 V
- -3.6 - mV/
- 135 190
- 142 200 mΩ
- 145 205
- 7.4 -
Ω
2.5 - - S
*1 Limited only by maximum temperature allowed.
*2 Pw10μs , Duty cycle1%
*3 TC=25
*4 Pulsed
                                             
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20190527 - Rev.002


Part Number RD3P050SNFRA
Description Power MOSFET
Maker ROHM
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RD3P050SNFRA Datasheet PDF






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