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Rohm Semiconductor Electronic Components Datasheet

RD3P130SP Datasheet

Power MOSFET

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RD3P130SP
  Pch -100V -13A Power MOSFET
   Datasheet
lOutline
VDSS
-100V
 
RDS(on)(Max.)
200mΩ
DPAK
ID
±13A
TO-252
PD
20W
 
      
lFeatures
1) Low on - resistance
2) Fast switching speed
3) Drive circuits can be simple
4) Parallel use is easy
5) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Tape width (mm)
Type Basic ordering unit (pcs)
16
2500
TL
Taping code
TL1
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
RD3P130SP
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-100
V
Continuous drain current
ID*1
±13
A
Pulsed drain current
IDP*2
±52
A
Gate - Source voltage
VGSS
±20
V
Power dissipation
PD*3
20
W
Junction temperature
Tj
150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
1/12
20180608 - Rev.005    


Rohm Semiconductor Electronic Components Datasheet

RD3P130SP Datasheet

Power MOSFET

No Preview Available !

RD3P130SP
          
lThermal resistance
Parameter
Thermal resistance, junction - case
                Datasheet
                    
Symbol
RthJC*3
Values
Unit
Min. Typ. Max.
-
- 6.25 /W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = -1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = -1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = -100V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = -10V , ID = -1mA
 ΔVGS(th)   ID = -1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
VGS = -10V, ID = -6.5A
RDS(on)*4 VGS = -4.5V, ID = -6.5A
VGS = -4.0V, ID = -6.5A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = -10V, ID = -13A
Values
Unit
Min. Typ. Max.
-100 -
-
V
- -91.3 - mV/
-
- -1 μA
-
- ±10 μA
-1.0 - -2.5 V
- 3.0 - mV/
- 135 200
- 150 220 mΩ
- 155 230
- 6.0 -
Ω
10 -
-
S
*1 Limited only by maximum temperature allowed.
*2 Pw10μs , Duty cycle1%
*3 TC=25
*4 Pulsed
                                             
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2/12
                                          
20180608 - Rev.005


Part Number RD3P130SP
Description Power MOSFET
Maker ROHM
PDF Download

RD3P130SP Datasheet PDF






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