RD3P130SP
lThermal resistance
Parameter
Thermal resistance, junction - case
Datasheet
Symbol
RthJC*3
Values
Unit
Min. Typ. Max.
-
- 6.25 ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = -1mA
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID = -1mA
ΔTj referenced to 25℃
Zero gate voltage
drain current
IDSS VDS = -100V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = -10V , ID = -1mA
ΔVGS(th) ID = -1mA
ΔTj referenced to 25℃
Static drain - source
on - state resistance
VGS = -10V, ID = -6.5A
RDS(on)*4 VGS = -4.5V, ID = -6.5A
VGS = -4.0V, ID = -6.5A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = -10V, ID = -13A
Values
Unit
Min. Typ. Max.
-100 -
-
V
- -91.3 - mV/℃
-
- -1 μA
-
- ±10 μA
-1.0 - -2.5 V
- 3.0 - mV/℃
- 135 200
- 150 220 mΩ
- 155 230
- 6.0 -
Ω
10 -
-
S
*1 Limited only by maximum temperature allowed.
*2 Pw≦10μs , Duty cycle≦1%
*3 TC=25℃
*4 Pulsed
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20180608 - Rev.005
