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Rohm Semiconductor Electronic Components Datasheet

RD3S075CN Datasheet

Power MOSFET

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RD3S075CN
  Nch 190V 7.5A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
190V
336mΩ
±7.5A
52W
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Drive circuits can be simple
4) Parallel use is easy
5) Pb-free plating ; RoHS compliant
lOutline
TO-252
 
 
 
 
      
lInner circuit
   Datasheet
 
lApplication
Switching Power Supply
lPackaging specifications
Packing
Embossed Tape
Packing code
TL1
Marking
RD3S075CN
Basic ordering unit (pcs)
2500
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation (Tc = 25°C)
Junction temperature
Operating junction and storage temperature range
VDSS
ID*1
IDP*2
VGSS
IAS*3
EAS*3
PD
Tj
Tstg
190
V
±7.5
A
±30
A
±20
V
3.8
A
4.81
mJ
52
W
150
-55 to +150
                                                                                        
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
1/12
20170929 - Rev.002    


Rohm Semiconductor Electronic Components Datasheet

RD3S075CN Datasheet

Power MOSFET

No Preview Available !

RD3S075CN
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
 
                  
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
-
- 2.36 /W
-
- 147 /W
-
- 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 190V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±20V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 3.8A
Tj = 25°C
RDS(on)*4 Tj = 125°C
VGS = 4V, ID = 3.8A
Tj = 25°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
190 -
-
V
 
 
 
-
- 10 μA
-
- 100
-
- ±100 μA
0.5 - 2.5 V
 
 
 
- 240 336
- 360 - mΩ
- 248 347
- 5.0 - Ω
                                                                                         
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
2/12
20170929 - Rev.002


Part Number RD3S075CN
Description Power MOSFET
Maker ROHM
PDF Download

RD3S075CN Datasheet PDF






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