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Rohm Semiconductor Electronic Components Datasheet

RD3U041AAFRA Datasheet

Power MOSFET

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RD3U041AAFRA
  Nch 250V 4A Power MOSFET
   Datasheet
lOutline
VDSS
250V
 
RDS(on)(Max.)
1.3Ω
DPAK
ID
±4.0A
TO-252
PD
29W
 
      
lFeatures
1) Low on-resistance
2) Fast switching
3) Drive circuits can be simple
4) Pb-free plating ; RoHS compliant
5) AEC-Q101 Qualified
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Quantity (pcs)
16
2500
Taping code
TL
Marking
RD3U041AA
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
250
V
Continuous drain current (Tc = 25°C)
ID*1
±4.0
A
Pulsed drain current
IDP*2
±16
A
Gate - Source voltage
VGSS
±30
V
Avalanche current, single pulse
IAS*3
2.0
A
Avalanche energy, single pulse
EAS*3
1.61
mJ
Power dissipation (Tc = 25°C)
PD*4
29
W
Junction temperature
Tj
150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20191024 - Rev.003    


Rohm Semiconductor Electronic Components Datasheet

RD3U041AAFRA Datasheet

Power MOSFET

No Preview Available !

RD3U041AAFRA
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
 
                  
Symbol
RthJC*4
RthJA*5
Tsold
Values
Unit
Min. Typ. Max.
-
- 4.3 /W
-
- 100 /W
-
- 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
IDSS VDS = 250V, VGS = 0V
IGSS
VGS(th)
VGS = ±30V, VDS = 0V
VDS = 10V, ID = 1mA
RDS(on)*6 VGS = 10V, ID = 2.0A
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
250 -
-
V
-
- 10 μA
-
- ±100 nA
3.5 - 5.5 V
- 0.93 1.3 Ω
- 4.0 - Ω
                                                                                         
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/11
20191024 - Rev.003


Part Number RD3U041AAFRA
Description Power MOSFET
Maker ROHM
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RD3U041AAFRA Datasheet PDF






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