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Rohm Semiconductor Electronic Components Datasheet

RD3U060CN Datasheet

Power MOSFET

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RD3U060CN
  Nch 250V 6A Power MOSFET
   Datasheet
lOutline
VDSS
250V
 
RDS(on)(Max.)
530mΩ
DPAK
ID
±6A
TO-252
PD
52W
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Drive circuits can be simple
4) Parallel use is easy
5) Pb-free plating ; RoHS compliant
 
      
lInner circuit
lPackaging specifications
Packing
Reel size (mm)
lApplication
Switching Power Supply
Type Tape width (mm)
Quantity (pcs)
Taping code
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current, single pulse
Power dissipation (Tc = 25°C)
Junction temperature
Operating junction and storage temperature range
 
VDSS
ID*1
ID*1
IDP*2
VGSS
EAS*3
IAS*3
PD
Tj
Tstg
 
250
±6
±3.3
±24
±30
2.62
3
52
150
-55 to +150
 
Embossed
Tape
330
16
2500
TL1
RD3U060CN
Unit
V
A
A
A
V
mJ
A
W
 
                                                                                        
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20190603 - Rev.004    


Rohm Semiconductor Electronic Components Datasheet

RD3U060CN Datasheet

Power MOSFET

No Preview Available !

RD3U060CN
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Soldering temperature, wavesoldering for 10s
                Datasheet
 
                  
Symbol
RthJC
Tsold
Values
Unit
Min. Typ. Max.
-
- 2.36 /W
-
- 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Forward Transfer
Admittance
V(BR)DSS VGS = 0V, ID = 1mA
IDSS
IGSS
VGS(th)
VDS = 250V, VGS = 0V
Tj = 25°C
VGS = ±30V, VDS = 0V
VDS = 10V, ID = 1mA
RDS(on)*4 VGS = 10V, ID = 3A
|Yfs|*4 VDS = 10V, ID = 3.75A
Values
Unit
Min. Typ. Max.
250 -
-
V
 
 
 
μA
-
- 10
-
- ±100 nA
3.0 - 5.0 V
- 410 530 mΩ
2.2 4.4 -
S
*1 Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L 500μH, VDD = 50V, RG = 25Ω, starting Tj = 25°C
*4 Pulsed
                                                                                         
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/11
20190603 - Rev.004


Part Number RD3U060CN
Description Power MOSFET
Maker ROHM
PDF Download

RD3U060CN Datasheet PDF






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