RD3U080CN
Nch 250V 8A Power MOSFET
Datasheet l Outline
VDSS
250V
RDS(on)(Max.)
300mΩ
DPAK
±8A
TO-252
85W l Features 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; Ro HS pliant
l Inner circuit l Packaging specifications Packing
Reel size (mm) l Application Switching application
Type Tape width (mm) Basic ordering unit (pcs)
Taping code
Marking l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain
- Source voltage
Continuous drain current
Tc = 25°C Tc = 100°C
Pulsed drain current
Gate
- Source voltage
Avalanche energy, single pulse
Avalanche current, single pulse
Power dissipation (Tc = 25°C)
Junction temperature
Operating junction and storage temperature range
VDSS ID- 1 ID- 1 IDP- 2 VGSS EAS- 3 IAS- 3 PD Tj Tstg
250 ±8 ±4.2 32 ±30 4.67 4 85 150 -55 to +150
Embossed Tape 330 16 2500 TL1
Unit V A A A V m J A...
