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RFN10NS4SFH - Super Fast Recovery Diode

Key Features

  • 1)Low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S ձ Manufacture Date zTaping Dimensions(Unit : mm) Data Sheet AEC-Q101 Qualified zLand Size Figure(Unit : mm) LPDS zStructure zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified foward current VRM VR Io Forward current surge peak Junction temperature IFSM Tj Storage temperature Tstg Conditions Dut.

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Datasheet Details

Part number RFN10NS4SFH
Manufacturer ROHM
File Size 915.24 KB
Description Super Fast Recovery Diode
Datasheet download datasheet RFN10NS4SFH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Super Fast Recovery Diode RFN10NS4SFH zSerise Standard Fast Recovery zDimensions(Unit : mm) zApplications General rectification zFeatures 1)Low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S ձ Manufacture Date zTaping Dimensions(Unit : mm) Data Sheet AEC-Q101 Qualified zLand Size Figure(Unit : mm) LPDS zStructure zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified foward current VRM VR Io Forward current surge peak Junction temperature IFSM Tj Storage temperature Tstg Conditions Duty0.