RFN1L6SDD
Features
1) Low forward voltage
2) Low switching loss
ROHM : PMDS JEDEC : SOD-106
1 2 : Manufacture Date
- Construction
- Taping Dimensions (Unit : mm)
Silicon epitaxial planar type
2.0±0.05 4.0±0.1
PMDS
- Structure
Cathode
φ1.55±0.05
Anode
5.3±0.1 0.05
9.5±0.1 5.5±0.05 1.75±0.1
12±0.2
2.9±0.1
- Absolute Maximum Ratings (Tl= 25°C)
Parameter
Symbol
4.0±0.1
φ1.55
2.8MAX
Conditions
Limits Unit
Repetitive peak reverse voltage
Duty≦0.5
600 V
Reverse voltage
VR Direct voltage
Average current
Io
On glass epoxy substrate, 60Hz half sin wave , Resistive load Tl=115ºC
Non-repetitive forward surge current IFSM 60Hz half sin wave, Non-repetitive at Tj=25ºC
600 0.8...
