de common dual type 2) Low VF 3) Low switching loss
①
1.2 1.3 0.8
(1) (2) (3)
2.54±0.5 2.54±0.5
ROHM : TO-220FN ① : Manufacture Date
14.0±0.5
2.6±0.5
0.75±
0.1 0.05.
Structure
(1) Anode
(2) Cathode
(3) Anode.
Construction Silicon epitaxial planar type.
Packing (Unit : mm)
7
540
34.5.
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage Reverse voltage Average current Non-repetitive forward surge current Ope.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Super Fast Recovery Diode
RFN20T2DNZ
Datasheet
Series Standard Fast Recovery
Applications General rectification
Dimensions (Unit : mm)
10.0±
0.3 0.1
߶3.2±0.2
4.5±
0.3 0.1
2.8±
0.2 0.1
0.4 0.2
15.0±
12.0±0.2
5.0±0.2 8.0±0.2
Features 1) Cathode common dual type 2) Low VF 3) Low switching loss
①
1.2 1.3 0.8
(1) (2) (3)
2.54±0.5 2.54±0.5
ROHM : TO-220FN ① : Manufacture Date
14.0±0.5
2.6±0.5
0.75±
0.1 0.05
Structure
(1) Anode
(2) Cathode
(3) Anode
Construction Silicon epitaxial planar type
Packing (Unit : mm)
7
540
34.
RFN20T2DNZ Datasheet
