RFN5BGE3S
RFN5BGE3S is Super Fast Recovery Diode manufactured by ROHM.
Features
1) Low switching loss 2) High current overload capacity
ROHM : TO-252GE JEITA :
- - Construction Silicon epitaxial planar type
- Taping specifications (Unit : mm)
TO-252
2.3 2.3
- Structure
Cathode
Open Anode
- Absolute maximum ratings (at Tc= 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
Duty≦0.5
Reverse voltage
Average rectified foward current
Io
Peak forward surge current
IFSM
Junction temperature
Tj
Reverse direct voltage
60Hz half sin waveform, resistive load, Tc=95°CMax 60Hz half sin waveform, non-repetitive, Tj=25°C
- 350
°C
Storage temperature
Tstg
- - 55 ～150 °C
- Electrical characteristics (at Tj= 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max....
