RFUH20NS4S - Super Fast Recovery Diode

ROHM

Datasheet Details

Super Fast Recovery Diode RFUH20NS4S zSerise Super Fast Recovery zDimensions(Unit : mm) zApplications General rectification RFUH20 NS4S ձ.

1)Ultra low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S ձ Manufacture Date zTaping Dimensions(Unit : mm) Data Sheet zLand Size Figure(Unit : mm) LPDS zStructure zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Conditions Duty䍺0.5 Direct voltag.