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RFUH20NS6S - Super Fast Recovery Diode

Features

  • 1)Ultra low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S ձ Manufacture Date zTaping Dimensions(Unit : mm) Data Sheet zLand Size Figure(Unit : mm) LPDS zStructure zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Conditions Duty0.5 Direct voltage.

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Datasheet Details

Part number RFUH20NS6S
Manufacturer ROHM
File Size 470.91 KB
Description Super Fast Recovery Diode
Datasheet download datasheet RFUH20NS6S Datasheet
Additional preview pages of the RFUH20NS6S datasheet.

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Full PDF Text Transcription

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Super Fast Recovery Diode RFUH20NS6S zSerise Super Fast Recovery zDimensions(Unit : mm) zApplications General rectification RFUH20 NS6S ձ zFeatures 1)Ultra low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S ձ Manufacture Date zTaping Dimensions(Unit : mm) Data Sheet zLand Size Figure(Unit : mm) LPDS zStructure zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Conditions Duty0.
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