900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Rohm Semiconductor Electronic Components Datasheet

RGPR50NL45HR Datasheet

IGBT

No Preview Available !

RGPR50NL45HR
450V 45A Ignition IGBT
Datasheet
BVCES
IC
VCE(sat) (Typ.)
EAS
450±30V
45A
1.6V
500mJ
lOutline
LPDL (TO-263L)
(1)
(3)
(2)
lFeatures
lInner circuit
(2)
1) Low Collector - Emitter Saturation Voltage
(1)
2) High Self-Clamped Inductive Switching Energy
(1) Gate
(2) Collector
(3) Emitter
3) Built in Gate-Emitter Protection Diode
4) Built in Gate-Emitter Resistance
5) Qualified to AEC-Q101
6) Pb - free Lead Plating ; RoHS Compliant
(3)
lPackaging specifications
Packing
Reel size (mm)
Taping
330
lApplication
Ignition Coil Driver Circuits
Solenoid Driver Circuits
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
24
1,000
TL
RGPR50NL45
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Collector - Emitter Voltage
VCES
Emitter-Collector Voltage (VGE = 0V)
Gate - Emitter Voltage
Collector Current
VEC
VGE
IC
Avalanche Energy (Single Pulse)
Power Dissipation
Operating Junction Temperature
Tj = 25°C
Tj = 150°C
EAS
EAS*2
PD
Tj
Storage Temperature
Tstg
Value
480
25
±10
45
500
250
187
-40 to +175
-55 to +175
Unit
V
V
V
A
mJ
mJ
W
°C
°C
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/9
2019.07 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

RGPR50NL45HR Datasheet

IGBT

No Preview Available !

RGPR50NL45HR
lThermal resistance
Parameter
Thermal Resistance IGBT Junction - Case
Datasheet
Symbol
Rθ(j-c)
Values
Min. Typ. Max.
- - 0.80
Unit
C/W
lElectrical characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Collector - Emitter Breakdown
Voltage
IC = 2mA, VGE = 0V,
BVCES Tj = 25°C
Tj = -40 to 175°C*2
Gate - Emitter Breakdown
Voltage
BVEC IC = -10mA, VGE = 0V
Min.
420
415
25
Values
Typ.
450
-
35
Max.
480
485
-
Gate - Emitter Breakdown
Voltage
BVGES IG = ±5mA, VCE = 0V
Collector Cut - off Current
Gate - Emitter Leakage
Current
VCE = 300V, VGE = 0V,
ICES Tj = 25°C
Tj = 150°C*2
IGES VGE = ±10V, VCE = 0V
Gate - Emitter Threshold
Voltage
Collector - Emitter Saturation
Voltage
Collector - Emitter Saturation
Voltage
Collector - Emitter Saturation
Voltage
VCE = 5V, IC = 23mA,
VGE(th) Tj = 25°C
Tj = 150°C*2
IC = 23A, VGE = 5V,
VCE(sat) Tj = 25°C
Tj = 150°C*2
IC = 9.2A, VGE = 4.5V,
VCE(sat) Tj = 25°C
Tj = 150°C*2
IC = 23A, VGE = 4V,
VCE(sat) Tj = 25°C
Tj = 150°C*2
±12
-
-
±0.4
1.3
-
-
-
-
-
-
-
-
-
-
±0.6
1.7
1.3
1.60
1.80
1.20
1.17
1.70
2.00
±17
7
100
±1.2
2.1
-
2.00
-
1.50
-
2.10
-
Unit
V
V
V
μA
μA
mA
V
V
V
V
V
V
V
V
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/9
2019.07 - Rev.A


Part Number RGPR50NL45HR
Description IGBT
Maker ROHM
PDF Download

RGPR50NL45HR Datasheet PDF






Similar Datasheet

1 RGPR50NL45HR IGBT
ROHM





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy