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RGT50NL65D - Field Stop Trench IGBT

Key Features

  • 1) Low Collector - Emitter Saturation Voltage 2) Low Switching Loss 3) Short Circuit Withstand Time 5μs 4) Built in Very Fast & Soft Recovery FRD (RFN - Series).
  • Outline LPDL (TO-263L) (2) (1) (3).
  • Inner Circuit (2).
  • 1 (1) (3) (1) Gate (2) Collector (3) Emitter.
  • 1 Built in FRD 5) Pb - free Lead Plating ; RoHS Compliant.

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Datasheet Details

Part number RGT50NL65D
Manufacturer ROHM
File Size 1.06 MB
Description Field Stop Trench IGBT
Datasheet download datasheet RGT50NL65D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RGT50NL65D 650V 25A Field Stop Trench IGBT Datasheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 25A 1.