RJ1P12BBD Datasheet PDF

RJ1P12BBD Nch 100V 120A Power MOSFET VDSS RDS(on)(Max.) ID PD 100V 5.8mΩ ±120A 178W lFeatures 1) Low on - resistance 2) High power small mold package 3) Pb-free lead plating ; RoHS compliant 4) UIS tested 5) Halogen free lOutline TO-263AB LPT(L) lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Embossed Tape Reel size (mm) 330 Type Tape width (mm) Quantity (pcs) 24 1000 Taping code TLL Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) RJ1P12BBD Parameter Symbol Value Unit Drain - Source voltage Continuous drain current VGS = 10V Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation Junction temperature Operating junction and storage temperature range VDSS ID*1 IDP*2 VGSS IAS*3 EAS*3 PD*1 Tj Tstg 100 ±120 ±240 ±20 40 125 178 150 -55 to +150 V A A V A mJ W ℃ ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.002 RJ1P12BBD lThermal resistance Parameter Thermal resistance, junction - case Datasheet Symbol RthJC*1 Values Min.