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Rohm Semiconductor Electronic Components Datasheet

RJ1P12BBD Datasheet

Power MOSFET

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RJ1P12BBD
  Nch 100V 120A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
100V
5.8mΩ
±120A
178W
lFeatures
1) Low on - resistance
2) High power small mold package
3) Pb-free lead plating ; RoHS compliant
4) UIS tested
5) Halogen free
lOutline
TO-263AB
LPT(L)
 
 
      
lInner circuit
   Datasheet
 
lApplication
Switching
lPackaging specifications
Packing
 
Embossed
Tape
Reel size (mm)
330
Type Tape width (mm)
Quantity (pcs)
24
1000
Taping code
TLL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
RJ1P12BBD
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
VGS = 10V
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
VDSS
ID*1
IDP*2
VGSS
IAS*3
EAS*3
PD*1
Tj
Tstg
100
±120
±240
±20
40
125
178
150
-55 to +150
V
A
A
V
A
mJ
W
                                                                                        
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20190527 - Rev.002    


Rohm Semiconductor Electronic Components Datasheet

RJ1P12BBD Datasheet

Power MOSFET

No Preview Available !

RJ1P12BBD
          
lThermal resistance
Parameter
Thermal resistance, junction - case
                Datasheet
                    
Symbol
RthJC*1
Values
Min. Typ. Max.
- - 0.70
Unit
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = 100V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V, ID = 2.5mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
RDS(on)*4 VGS = 10V, ID = 50A
VGS = 6.0V, ID = 40A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 5V, ID = 40A
Values
Unit
Min. Typ. Max.
100 - - V
- 98.33 - mV/
- - 10 μA
- - ±10 μA
2.0 - 4.0 V
- -8.28 - mV/
- 4.4 5.8
- 5.2 7.8
- 2.6 -
Ω
30 - - S
*1 Tc =25, Limited only by maximum temperature allowed.
*2 Pw10μs , Duty cycle1%
*3 L 0.10mH, VDD = 50V, RG = 25Ω, Starting Tj = 25Fig.3-1,3-2
*4 Pulsed
                                             
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20190527 - Rev.002


Part Number RJ1P12BBD
Description Power MOSFET
Maker ROHM
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RJ1P12BBD Datasheet PDF






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