RJ1P12BBD
lThermal resistance
Parameter
Thermal resistance, junction - case
Datasheet
Symbol
RthJC*1
Values
Min. Typ. Max.
- - 0.70
Unit
℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID = 1mA
ΔTj referenced to 25℃
Zero gate voltage
drain current
IDSS VDS = 100V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V, ID = 2.5mA
ΔVGS(th) ID = 1mA
ΔTj referenced to 25℃
Static drain - source
on - state resistance
RDS(on)*4 VGS = 10V, ID = 50A
VGS = 6.0V, ID = 40A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 5V, ID = 40A
Values
Unit
Min. Typ. Max.
100 - - V
- 98.33 - mV/℃
- - 10 μA
- - ±10 μA
2.0 - 4.0 V
- -8.28 - mV/℃
- 4.4 5.8
mΩ
- 5.2 7.8
- 2.6 -
Ω
30 - - S
*1 Tc =25℃, Limited only by maximum temperature allowed.
*2 Pw≦10μs , Duty cycle≦1%
*3 L ⋍ 0.10mH, VDD = 50V, RG = 25Ω, Starting Tj = 25℃ Fig.3-1,3-2
*4 Pulsed
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20190527 - Rev.002
