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Rohm Semiconductor Electronic Components Datasheet

RLD65MZT7 Datasheet

650nm low power single mode laser diode

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650nm Red Single Mode Laser Diode
RLD65MZT7
Datasheet
Application
Optical disk pickup
Sensor
Etc.
Outline view
Merit
Single mode
Φ5.6 metal stem
Absolute Maximum Ratings (Tc=25°C)
Parameter
Symbol
Optical output
Po
Reverse voltage
LD
PIN PD
Vr
Vr(PD)
Operating temp.
Top
Storage temp.
Tstg
Ratings
7
2
30
-10 to 70
-40 to 85
Unit
mW
V
V
°C
°C
Characteristics (Tc=25°C)
Parameter
Symbol
Conditions
MIN.
Threshold current
Ith
--
Operating current
Iop
Po=5mW
Operating voltage
Vop
Po=5mW
Output efficiency
η
2mW/(I(5mW)-I(3mW))
0.2
Monitor current
Im
Po=5mW, Vr(PD)=15V
0.1
Beam divergence
θ//
θ
Po=5mW
6.5
20
Beam tolerance
θ//
θ
Po=5mW
-3
-4
Emission point
accuracy
XYZ
-100
Lasing wavelength
λ
Po=5mW
645
Astigmatic difference
As
NA=0.55, Po=3.5mW
Caution:
θand θ// are defined as full width at half maximum.
Operation temperature is regulated by case temperature; Tc
TYP.
20
28
2.3
0.7
0.2
8.0
27
0
0
0
659
5
MAX.
60
70
2.6
1.0
0.5
10.0
35
+3
+4
+100
665
10
Unit
mA
mA
V
W/A
mA
deg.
deg.
deg.
deg.
μm
nm
μm
https://www.rohm.com/
© 2019 ROHM Co., Ltd. All rights reserved.
1/8
2019.5 - Rev.009


Rohm Semiconductor Electronic Components Datasheet

RLD65MZT7 Datasheet

650nm low power single mode laser diode

No Preview Available !

RLD65MZT7
Electrical Characteristics
2540506070
7
63
5 I-V
4
2
3
21
I-L
1
00
0 10 20 30 40 50 60
If [mA]
Datasheet
7
6
5
4
3
2
1
0
0 0.05 0.1 0.15 0.2 0.25 0.3
Im [mA]
Optical Characteristics
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-60 -40 -20 0
20 40 60
FFP [deg.]
2540506070
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
655 660 665 670
λ [nm]
675
* This data is made from the result of having measured the sample extracted at random. Therefore, it is not what showed the
ability of the whole product.
https://www.rohm.com/
© 2019 ROHM Co., Ltd. All rights reserved.
2/8
2019.5 - Rev.009


Part Number RLD65MZT7
Description 650nm low power single mode laser diode
Maker ROHM
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RLD65MZT7 Datasheet PDF





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