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Rohm Semiconductor Electronic Components Datasheet

RQ5E035XN Datasheet

Power MOSFET

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RQ5E035XN
  Nch 30V 3.5A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
50mΩ
±3.5A
1.0W
lFeatures
1) Low on-resistance
2) Built-in G-S protection diode
3) Small surface mount package(TSMT3)
4) Pb-free lead plating ; RoHS compliant
lOutline
SOT-346T
SC-96
TSMT3
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Quantity (pcs)
8
3000
Taping code
TCL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
XQ
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
30 V
Continuous drain current
ID ±3.5 A
Pulsed drain current
IDP*1 ±12 A
Gate - Source voltage
VGSS
±20 V
Power dissipation
PD*2 1.0 W
PD*3 0.7 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20190527 - Rev.002    


Rohm Semiconductor Electronic Components Datasheet

RQ5E035XN Datasheet

Power MOSFET

No Preview Available !

RQ5E035XN
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 125
- - 178
Unit
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = 30V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V, ID = 1mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
VGS = 10V, ID = 3.5A
RDS(on)*4 VGS = 4.5V, ID = 3.5A
VGS = 4.0V, ID = 3.5A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 10V, ID = 3.5A
Values
Unit
Min. Typ. Max.
30 - - V
- 34.15 - mV/
- - 1 μA
- - ±10 μA
1.0 - 2.5 V
- -2.34 - mV/
- 35 50
- 45 65 mΩ
- 50 70
- 2.1 -
Ω
2.2 - - S
*1 Pw10μs, Duty cycle1%
*2 Mounted on a ceramic board (30x30x0.8mm)
*3 Mounted on a FR4 (25x25x0.8mm)
*4 Pulsed
                                             
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20190527 - Rev.002


Part Number RQ5E035XN
Description Power MOSFET
Maker ROHM
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RQ5E035XN Datasheet PDF






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