RQ5E035XN
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Datasheet
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 125
- - 178
Unit
℃/W
℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID = 1mA
ΔTj referenced to 25℃
Zero gate voltage
drain current
IDSS VDS = 30V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V, ID = 1mA
ΔVGS(th) ID = 1mA
ΔTj referenced to 25℃
Static drain - source
on - state resistance
VGS = 10V, ID = 3.5A
RDS(on)*4 VGS = 4.5V, ID = 3.5A
VGS = 4.0V, ID = 3.5A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 10V, ID = 3.5A
Values
Unit
Min. Typ. Max.
30 - - V
- 34.15 - mV/℃
- - 1 μA
- - ±10 μA
1.0 - 2.5 V
- -2.34 - mV/℃
- 35 50
- 45 65 mΩ
- 50 70
- 2.1 -
Ω
2.2 - - S
*1 Pw≦10μs, Duty cycle≦1%
*2 Mounted on a ceramic board (30x30x0.8mm)
*3 Mounted on a FR4 (25x25x0.8mm)
*4 Pulsed
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/11
20190527 - Rev.002
