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Rohm Semiconductor Electronic Components Datasheet

RQ6E080AJ Datasheet

Small Signal MOSFET

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RQ6E080AJ
  Nch 30V 8A Small signal MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
16.5mΩ
±8.0A
1.25W
lFeatures
1) Low on - resistance
2) Small Surface Mount Package (TSMT6)
3) Pb-free lead plating ; RoHS compliant
lOutline
SOT-457T
SC-95
TSMT6
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TCR
Marking
HS
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
VDSS
ID
IDP*1
VGSS
IAS*2
EAS*2
PD*3
PD*4
Tj
Tstg
30
±8.0
±18
±12
8.0
4.7
1.25
0.95
150
-55 to +150
V
A
A
V
A
mJ
W
W
                                                                                        
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
1/11
20170317 - Rev.001    


Rohm Semiconductor Electronic Components Datasheet

RQ6E080AJ Datasheet

Small Signal MOSFET

No Preview Available !

RQ6E080AJ
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*3
RthJA*4
Values
Min. Typ. Max.
- - 100
- - 132
Unit
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = 30V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = VGS , ID = 2mA
 ΔVGS(th)   ID = 2mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
RDS(on)*5 VGS = 4.5V, ID = 8.0A
VGS = 2.5V, ID = 4.0A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*5 VDS = 5V, ID = 8A
Values
Unit
Min. Typ. Max.
30 - - V
- 18 - mV/
- - 1 μA
- - ±100 nA
0.5 - 1.5 V
- -1.8 - mV/
- 12.5 16.5
- 15.7 19.5
- 1.9 -
Ω
10 - - S
*1 Pw 10μs, Duty cycle 1%
*2 L 0.1mH, VDD = 15V, RG = 25Ω, Starting Tj = 25Fig.3-1,3-2
*3 Mounted on a ceramic boad (30×30×0.8mm)
*4 Mounted on a FR4 (25×25×0.8mm)
*5 Pulsed
                                             
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20170317 - Rev.001


Part Number RQ6E080AJ
Description Small Signal MOSFET
Maker ROHM
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RQ6E080AJ Datasheet PDF






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