1) Low forward voltage
2) High current overload capacity 3) Small mold type
ROHM : PMDE dot (year week factory) + day
(PMDE)
lTaping Dimensions (Unit : mm)
PMDE
0.8
lStructure
Cathode
Anode
lConstruction Silicon diffused junction type
lAbsolute Maximum Ratings (Tl= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
400 V
Reverse voltage
VR Direct voltage
Average current Non-repetitive forward surge current
Io IFSM
On glass epoxy sub.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Rectifier Diode
RR1VWM4STF
lSeries Standard Rectifier
lDimensions (Unit : mm)
Data Sheet
AEC-Q101 Qualified
lLand Size Figure (Unit : mm)
1.1
0.8 0.5 2.0
lApplications General rectification
lFeatures 1) Low forward voltage
2) High current overload capacity 3) Small mold type
ROHM : PMDE dot (year week factory) + day
(PMDE)
lTaping Dimensions (Unit : mm)
PMDE
0.8
lStructure
Cathode
Anode
lConstruction Silicon diffused junction type
lAbsolute Maximum Ratings (Tl= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.
RR1VWM4STF Datasheet
