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S2303
N-channel SiC power MOSFET bare die
VDSS RDS(on) (Typ.)
ID
1200 80m 40A*1
Datasheet
Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive
Inner circuit
(1)
(2) *1
(3)
(1) Gate (2) Drain (3) Source
*1 Body Diode
Application Solar inverters DC/DC converters Switch mode power supplies Induction heating Motor drives
Absolute maximum ratings (Ta = 25°C) Parameter
Drain - Source voltage
Continuous drain current Pulsed drain current
Tc = 25°C
Gate - Source voltage (DC)
Gate - Source surge voltage (tsurge < 300nsec) Junction temperature
Range of storage temperature
Symbol
VDSS ID *1 ID,pulse *2 VGSS VGSS_surge*3 Tj Tstg
Value 1200
40 140 6 to 22 10 to 26 175 55 to 175
Unit V A A V V °C °C
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S2303 Datasheet
