1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible.
Inner Circuit.
Construction Silicon carbide epitaxial planar type Schottky diode
Datasheet.
Absolute Maximum Ratings (Tj = 25°C ) Parameter
Symbol
Value
Reverse voltage (repetitive peak)
VRM 1200
Reverse voltage (DC)
VR 1200
Continuous forward current
IF 30
Surge nonrepetitive forward current
i2t value
PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=.
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S6307. For precise diagrams, and layout, please refer to the original PDF.
S6307 SiC Schottky Barrier Diode VR 1200V IF 30A*1 QC 82nC Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible Inner Ci...
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uced temperature dependence 3) High-speed switching possible Inner Circuit Construction Silicon carbide epitaxial planar type Schottky diode Datasheet Absolute Maximum Ratings (Tj = 25°C ) Parameter Symbol Value Reverse voltage (repetitive peak) VRM 1200 Reverse voltage (DC) VR 1200 Continuous forward current IF 30 Surge nonrepetitive forward current i2t value PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C 1≦PW≦10ms, Tj=25°C 1≦PW≦10ms, Tj=150°C IFSM *2 ∫i2d*t2 190 140 780 195 109 Junction temperature Tj 175 Range of storage temperature Tstg 55 to 175 *1 Limited by Tj *2 Assumes Zth(j-
S6307 Datasheet
