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SCS220AE - SiC Schottky Barrier Diode

Key Features

  • 1) Shorter recovery time 650V 20A 31nC TO-247 (1) (2) (3) lInner circuit 2) Reduced temperature dependence 3) High-speed switching possible (1) N/C (2) Cathode (3) Anode (1) (2) (3) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 2.

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Datasheet Details

Part number SCS220AE
Manufacturer ROHM
File Size 0.98 MB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SCS220AE Datasheet

Full PDF Text Transcription for SCS220AE (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SCS220AE. For precise diagrams, and layout, please refer to the original PDF.

SCS220AE SiC Schottky Barrier Diode lOutline Data Sheet VR IF QC lFeatures 1) Shorter recovery time 650V 20A 31nC TO-247 (1) (2) (3) lInner circuit 2) Reduced temperature...

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650V 20A 31nC TO-247 (1) (2) (3) lInner circuit 2) Reduced temperature dependence 3) High-speed switching possible (1) N/C (2) Cathode (3) Anode (1) (2) (3) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 20* 71* Surge no repetitive forward current IFSM 1 2 3 Tube 30 C SCS220AE Reel size (mm) Tape width (mm) Unit V V A A A A A W °C °C 260* 56* 4 Repetitive peak forw