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SCS230KE2AHR - SiC Schottky Barrier Diode

Key Features

  • 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible.
  • Inner circuit Datasheet (1) Anode (2) Cathode (3) Anode NotNeRewcDoemsimgennsded for.
  • Construction Silicon carbide epitaxial planar type.
  • Packaging specifications Packaging Tube Reel size (mm) - Tape width (mm) Type Basic ordering unit (pcs) 30 Packing code C Marking SCS230KE2A.
  • Absolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak.

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Datasheet Details

Part number SCS230KE2AHR
Manufacturer ROHM
File Size 1.11 MB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SCS230KE2AHR Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SCS230KE2AHR SiC Schottky Barrier Diode VR 1200V IF 15A/30A* QC 51nC(Per leg) (*Per leg/ Both legs) AEC-Q101 Qualified Outline TO-247 Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible Inner circuit Datasheet (1) Anode (2) Cathode (3) Anode NotNeRewcDoemsimgennsded for Construction Silicon carbide epitaxial planar type Packaging specifications Packaging Tube Reel size (mm) - Tape width (mm) Type Basic ordering unit (pcs) 30 Packing code C Marking SCS230KE2A Absolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) VRM 1200 Reverse voltage (DC) Continuous forward current *3 (Tc= 139°C) Surge non- PW=10ms sinusoidal, Tj=25°C repetitive forward current *3 PW=10ms sinusoidal