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SCS320AHG
SiC Schottky Barrier Diode
Datasheet
VR IF QC
Features 1) Shorter recovery time
650V 20A 47nC
Outline TO-220ACP
(1)
Inner Circuit
(2) (3)
(1)
2) Reduced temperature dependence 3) High-speed switching possible 4) High surge current capability
(1) Cathode (2) Cathode (3) Anode
(2) (3)
Construction Silicon carbide epitaxial planar type
Packaging Specifications Packaging
Tube
Reel size (mm)
-
Tape width (mm) Type
Basic ordering unit (pcs)
50
Packing code
C9
Marking
SCS320AH
Absolute Maximum Ratings (Tj = 25°C ) Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current (Tc=125°C)
Surge nonrepetitive forward current
PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C
Repetitive peak forward