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SCTMU001F - N-channel SiC power MOSFET

Key Features

  • 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 400V 120m 20A 132W TO220AB.
  • Inner circuit (2).
  • 1 (1) (1) Gate (2) Drain (3) Source.
  • 1 Body Diode (3) 6) Pb-free lead plating ; RoHS compliant.
  • Packaging specifications Packing Tube 50 SCTMU001F.

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Datasheet Details

Part number SCTMU001F
Manufacturer ROHM
File Size 453.51 KB
Description N-channel SiC power MOSFET
Datasheet download datasheet SCTMU001F Datasheet

Full PDF Text Transcription for SCTMU001F (Reference)

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SCTMU001F N-channel SiC power MOSFET Outline Datasheet VDSS RDS(on) (Typ....

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