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Rohm Semiconductor Electronic Components Datasheet

SH8K10S Datasheet

Power MOSFET

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SH8K10S
  30V Nch / Nch+SBD Power MOSFET
Symbol
VDSS
RDS(on)(Max.)
ID
PD
Tr1 Tr2
Nch Nch+SBD
30V 30V
24.0mΩ 19.6mΩ
±7.0A ±8.5A
2.0W
lFeatures
1) Low on - resistance
2) Small Surface Mount Package (SOP8)
3) Pb-free lead plating ; RoHS compliant
4) Halogen Free
lOutline
SOP8
 
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
330
Switching
Type Tape width (mm)
Quantity (pcs)
12
2500
Taping code
TB
Marking
SH8K10S
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Tr1 Tr2
Nch Nch+SBD
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
total
Junction temperature
Operating junction and storage temperature range
VDSS 30 30
ID ±7.0 ±8.5
IDP*1 ±28 ±34
VGSS ±20 ±20
PD*2 2.0
PD*3 1.4
Tj 150
Tstg -55 to +150
V
A
A
V
W
                                                                                        
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/18
20190527 - Rev.003    


Rohm Semiconductor Electronic Components Datasheet

SH8K10S Datasheet

Power MOSFET

No Preview Available !

SH8K10S
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
total
                Datasheet
                    
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 62.5
- - 89.2
Unit
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Type
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Tr1
V(BR)DSS
Tr2
 ΔV(BR)DSS  Tr1
   ΔTj     Tr2
VGS = 0V, ID = 1mA
VGS = 0V, ID = 1mA
ID = 1mA, referenced to 25
ID = 1mA, referenced to 25
Zero gate voltage
drain current
IDSS Tr1 VDS = 30V, VGS = 0V
Tr2 VDS = 30V, VGS = 0V
Gate - Source
leakage current
IGSS Tr1 VDS = 0V, VGS = ±20V
Tr2 VDS = 0V, VGS = ±20V
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
VGS(th)
Tr1
Tr2
 ΔVGS(th)   Tr1
   ΔTj     Tr2
VDS = 10V, ID = 1mA
VDS = 10V, ID = 1mA
ID = 1mA, referenced to 25
ID = 1mA, referenced to 25
VGS = 10V, ID = 7.0A
Tr1 VGS = 4.5V, ID = 7.0A
Static drain - source
on - state resistance
RDS(on)*4
VGS = 4.0V, ID = 7.0A
VGS = 10V, ID = 8.5A
Tr2 VGS = 4.5V, ID = 8.5A
VGS = 4.0V, ID = 8.5A
Forward Transfer
Admittance
|Yfs|*4 Tr1 VDS = 10V, ID = 7.0A
Tr2 VDS = 10V, ID = 8.5A
*1 Pw 10μs, Duty cycle 1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a Cu board (25×25×0.8mm)
*4 Pulsed
Values
Unit
Min. Typ. Max.
30 - -
V
30 - -
- 29 -
mV/
- 29 -
- -1
μA
- - 500
- - ±10
μA
- - ±10
1.0 - 2.5
V
1.0 - 2.5
- -1.6 -
mV/
- -1.6 -
- 17.0 24.0
- 23.0 33.0
- 25.0 35.0
- 14.0 19.6
- 17.8 24.9
- 19.0 26.6
5.0 - -
S
8.0 - -
                                                                                               
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/18
20190527 - Rev.003


Part Number SH8K10S
Description Power MOSFET
Maker ROHM
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SH8K10S Datasheet PDF






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