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Rohm Semiconductor Electronic Components Datasheet

US6J41FRA Datasheet

Small Signal MOSFET

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US6J41FRA
   -20V Pch+Pch Small Signal MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
-20V
260mΩ
±1.0A
1.0W
lFeatures
1) Low on - resistance
2) Built-in G-S Protection Diode
3) Small Surface Mount Package (TUMT6)
4) Pb-free lead plating ; RoHS compliant
5) AEC-Q101 Qualified
lOutline
SOT-363T
SC-113DA
TUMT6
 
      
lInner circuit
 
lApplication
Switching
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
180
8
3000
TR
J41
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-20 V
Continuous drain current
Pulsed drain current
ID ±1.0 A
IDP*1 ±4.0 A
Gate - Source voltage
VGSS
±8 V
Power dissipation (total)
PD*2 1.0 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
                                                                                        
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
1/11
20170706 - Rev.001


Rohm Semiconductor Electronic Components Datasheet

US6J41FRA Datasheet

Small Signal MOSFET

No Preview Available !

US6J41FRA
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient (total)
                Datasheet
                       
Symbol
Values
Unit
Min. Typ. Max.
RthJA*2
- - 125 /W
lElectrical characteristics (Ta = 25°C) <Tr1 and Tr2>
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Forward Transfer
Admittance
V(BR)DSS VGS = 0V, ID = -1mA
ΔV(BR)DSS ID = -1mA
  ΔTj  referenced to 25
IDSS VDS = -20V, VGS = 0V
IGSS VDS = 0V, VGS = ±8V
VGS(th) VDS = -10V, ID = -1mA
ΔVGS(th) ID = -1mA
  ΔTj  referenced to 25
VGS = -4.5V, ID = -1.0A
RDS(on)*3 VGS = -2.5V, ID = -1.0A
VGS = -1.8V, ID = -0.5A
VGS = -1.5V, ID = -0.2A
|Yfs|*3 VDS = -10V, ID = -1.0A
Values
Min. Typ. Max.
   
Unit
-20 - - V
- -21.9 - mV/
- - -1 μA
- - ±10 μA
-0.3 - -1.3 V
- 2.4 - mV/
- 180 260
- 240 340
- 320 450
- 400 560
1.0 - - S
                                                                                               
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
2/11
20170706 - Rev.001


Part Number US6J41FRA
Description Small Signal MOSFET
Maker ROHM
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US6J41FRA Datasheet PDF






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