UT6KE5 Datasheet | ROHM

100V Nch+Nch Power MOSFET VDSS RDS(on)(Max.) ID PD 100V 207mΩ ±2.0A 2.0W l Features 1) Low on - resistance 2) Small Surface Mount Package 3) Pb-free plating ; Ro HS pliant 4) Halogen Free l Outline DFN2020-8D HUML2020L8 l Inner circuit Datasheet l Packaging specifications Packing l Application Reel size (mm) Switching DC/DC Converter Type Tape width (mm) Quantity (pcs) Taping code Marking l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2> Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation Junction temperature Operating junction and storage temperature range VDSS ID IDP- 1 VGSS IAS- 2 EAS- 2 PD- 3 Tj Tstg 100 ±2.0 ±8.0 ±20 2.0 0.3 2.0 150 -55 to +150 Embossed Tape 180 8 3000 TCR KE5 Unit V A A V A m J W ℃ ℃ .rohm. © 2022 ROHM Co., Ltd. All rights reserved. 1/11 - Rev.002 UT6KE5 l Thermal resistance Parameter Thermal resistance, junction - ambient Symbol Rth JA- 3 Values Unit Min. Typ. Max. - - 62.5 ℃/W l Electrical characteristics (Ta = 25°C) <Tr1 and Tr2> Parameter Symbol Conditions...