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Transistors
2SB1188 / 2SB1182 / 2SB1240
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
∗ Measured using pulse current.
Cob
Min.
−40
−32
−5
−
−
−
82
−
−
Typ.
−
−
−
−
−
−0.5
−
100
50
Max.
−
−
−
−1
−1
−0.8
390
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=−50µA
IC=−1mA
IE=−50µA
VCB=−20V
VEB=−4V
IC/IB=−2A/−0.2A
VCE=−3V, IC=−0.5A
VCE=−5V, IE=0.5A, f=30MHz
VCB=−10V, IE=0A, f=1MHz
∗
∗
!Packaging specifications and hFE
Type
2SB1188
2SB1182
2SB1240
Package
Code
hFE Basic ordering unit (pieces)
PQR
PQR
PQR
T100
1000
−
−
Taping
TL
2500
−
−
TV2
2500
−
−
hFE values are classified as follows :
Item P
Q
hFE 82~180 120~270
R
180~390
!Electrical characteristic curves
−1000 Ta=100°C
−500
25°C
−40°C
−200
−100
−50
VCE=−3V
−20
−10
−5
−2
−1
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
−0.5
Ta=25°C −2.5mA
−0.4
−0.3
−0.2
−2.25mA
−2mA
−1.75mA
−1.5mA
−1.25mA
−1mA
−750µA
−500µA
−0.1
−250µA
0 IB=0A
0 −0.4 −0.8 −1.2 −1.6 −2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics
500 Ta=25°C
VCE=−6V
−3V
−1V
200
100
50
20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs.
collector current ( Ι )
