INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Spwwewc.DifaitacSaheteit4oUn.com
2SB1340
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -3V, IC= -2A)
·Complement to Type 2SD1889
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous
-6 A
ICM Collector Current-Peak
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature
-10 A
2
W
30
150 ℃
-55~150 ℃
isc Website：www.iscsemi.cn
