B1340 - 2SB1340

Description

Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) Complement to Type 2SD1889 APPLICATIONS

Designed for power amplifier applications.

ROHM Electronics

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Datasheet Details

Part number	B1340
Manufacturer	ROHM Electronics
File Size	137.96 KB
Description	2SB1340
Datasheet	B1340 Datasheet
Additional preview pages of the B1340 datasheet.

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Full PDF Text Transcription

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INCHANGE Semiconductor isc Product Specification www.DataSheet4U.com isc Silicon PNP Darlington Power Transistor 2SB1340 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ -10 A 2 W PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.

Published: Jul 25, 2010 |