Datasheet Details
| Part number | B1340 |
|---|---|
| Manufacturer | ROHM Electronics |
| File Size | 137.96 KB |
| Description | 2SB1340 |
| Download | B1340 Download (PDF) |
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| Part number | B1340 |
|---|---|
| Manufacturer | ROHM Electronics |
| File Size | 137.96 KB |
| Description | 2SB1340 |
| Download | B1340 Download (PDF) |
|
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·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889 APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ -10 A 2 W PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification www.DataSheet4U.com isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= -5mA ;
IB= 0 IC= -50μA ;
INCHANGE Semiconductor isc Product Specification www.DataSheet4U.
| Part Number | Description |
|---|---|
| B1370 | 2SB1370 |