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Power Transistor (50V, 3A)
2SD1760 / 2SD1864
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243.
Structure Epitaxial planar type NPN silicon transistor
Dimensions (Unit : mm)
2SD1760
6.5±0.2
5.1
+0.2 −0.1
C0.5
2.3
+0.2 −0.1
0.5±0.1
2SD1864
6.8±0.2
2.5±0.2
1.5±0.3
4.4±0.2
0.9
1.5 2.5
9.5±0.5
+0.3 −0.1
0.9
5.5
1.0
0.75 0.9
0.65±0.1
2.3±0.2 2.3±0.2
(1) (2) (3)
ROHM : CPT3 EIAJ : SC-63
0.55±0.1 1.0±0.2
(1) Base (2) Collector (3) Emitter
0.65Max.
0.5±0.1 (1) (2) (3)
2.54 2.54 1.05
14.5±0.5
0.45±0.
D1760 Datasheet
