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D1963 - 2SD1963

Datasheet Summary

Features

  • 1) Low saturation voltage, typically www. DataSheet4U. com VCE(sat) =.
  • 0.45V (Max. ) at IC/IB =.
  • 1.5A /.
  • 0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308. zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 (1)Base (2)Collector (3)Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VC.

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Datasheet Details

Part number D1963
Manufacturer ROHM Electronics
File Size 94.75 KB
Description 2SD1963
Datasheet download datasheet D1963 Datasheet
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2SD1963 Transistors Power transistor (50V, 3A) 2SD1963 zFeatures 1) Low saturation voltage, typically www.DataSheet4U.com VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308. zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 (1)Base (2)Collector (3)Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 50 20 6 3 5 0.5 2.0 150 −55 to 150 Unit V V V A(DC) A(Pulse) W W ∗1 ∗2 Collector power dissipation Junction temperature Storage temperature PC Tj Tstg °C °C ∗ ∗ 1 Single pulse, Pw=10ms 2 When mounted on a 40×40×0.
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