Package: TO-18, with PR and without window
Specifications
Item
Peak Wavelength FWHM Quasi-CW Optical Power Pulsed Optical Power Switching Time Operation Voltage Operating Temperature Emitting Area Soldering Temperature
Package
Condition
T=300 K 150 mA CW
200 mA qCW
Min. 1.80 100
0.7
Rating Typ. 1.85 150
0.9
Max. 1.89 200
1.4
Unit
µm nm
mW.
Full PDF Text Transcription for LED18FC-PR (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
LED18FC-PR. For precise diagrams, and layout, please refer to the original PDF.
LED18FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.85 µm series are based on heterostructures g...
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with central wavelength 1.85 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement. LED18FC-PR has a stable ouput power and a lifetime more then 80000 hours. Features • Structure: GaInAsSb/AlGaAsSb, Flip-Chip Design • Peak Wavelength: typ. 1.85 µm • Optical Ouput Power: typ. 0.
LED18FC-PR Datasheet
