B2N60 Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 4.0Ω ID = 2A.
B2N60 Key Features
- Fast Switching
- Low ON Resistance(Rdson≤4.5Ω)
- Low Gate Charge(Typ:8nC)
- Low Reverse Transfer Capacitances(Typ:3.8pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
B2N60 Applications
- used in various power switching circuit for system miniaturization and higher efficiency