B4N60 Datasheet - ROUM

4A 600V N-channel Enhancement Mode Power MOSFET

* Fast Switching

* ESD Improved Capability

* Low ON Resistance(Rdson≤2.5Ω)

* Low Gate Charge(Typical Data:14.5nC)

* Low Reverse Transfer Capacitances(Typical:4pF)

* 100% Single Pulse Avalanche Energy Test

* 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications

* used

B4N60

ROUM

1.27 MB

4a 600v n-channel enhancement mode power mosfet.

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B4N60 600V N-channel Enhancement Mode Power MOSFET ROUM

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