D630 mosfet equivalent, 9a 200v n-channel enhancement mode power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤0.4Ω)
* Low Gate Charge(Typical Data:22nC)
* Low Reverse Transfer Capacitances(Typical:22pF)
* 100% Single .
* High efficiency switch mode power supplies.
* Electronic lamp ballasts based on half bridge.
* UPS
* I.
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
VDSS = 200V RDS(on) （TYP)= .
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