E630 Datasheet - ROUM

9A 200V N-channel Enhancement Mode Power MOSFET

* Fast Switching

* Low ON Resistance(Rdson≤0.4Ω)

* Low Gate Charge(Typical Data:22nC)

* Low Reverse Transfer Capacitances(Typical:22pF)

* 100% Single Pulse Avalanche Energy Test

* 100% ΔVDS Test 3 Applications

* High efficiency switch mode power supplies.

* Electronic

E630

ROUM

1.32 MB

9a 200v n-channel enhancement mode power mosfet.

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E630 200V N-channel Enhancement Mode Power MOSFET ROUM

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