* Low On Resistance
* Low Gate Charge
* Fast Switching
* Low Reverse Transfer Capacitances
* 100% Single Pulse Avalanche Energy Test
* 100% ΔVDS T.

* AC-DC Switching Power
* Pulse Width Modulation Circuit
* Load Switching
* Inverter VDS = 75V RDS(on) .

These N-channel enhancement mode power MOSFETS Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. 2 Features
* Low On Resistance
* Low Gate Charge
* Fast Switching <.

ED-11

ED-15

ED-205

ED-5

ED-9

ED-X10

ED-X12

ED0006-AL

ED050SC3

ED060SC4

ED060SC7

ED060SCE

ED060SCM