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F20N60 Datasheet - ROUM

20A 600V N-channel Enhancement Mode Power MOSFET

F20N60 Features

* Fast Switching

* Low On Resistance(Rdson≤0.45Ω)

* Low Gate Charge(Typical:61nC)

* Low Reverse Transfer Capacitances(Typical:20pF)

* 100% Single Pulse Avalanche Energy Test

* 100% ΔVDS Test 3 Application

* Used in various power switching circuit for system miniaturizatio

F20N60 General Description

These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220F. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 0.36Ω ID = 20A .

F20N60 Datasheet (1.13 MB)

Preview of F20N60 PDF

Datasheet Details

Part number:

F20N60

Manufacturer:

ROUM

File Size:

1.13 MB

Description:

20a 600v n-channel enhancement mode power mosfet.

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F20N60 20A 600V N-channel Enhancement Mode Power MOSFET ROUM

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