F4N60 Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 2.1Ω ID = 4A.
F4N60 Key Features
- Fast Switching
- ESD Improved Capability
- Low ON Resistance(Rdson≤2.5Ω)
- Low Gate Charge(Typical Data:14.5nC)
- Low Reverse Transfer Capacitances(Typical:4pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
F4N60 Applications
- used in various power switching circuit for system miniaturization and higher efficiency