* Fast Switching
* ESD Improved Capability
* Low ON Resistance(Rdson≤1.4Ω)
* Low Gate Charge(Typical Data:24nC)
* Low Reverse Transfer Capacitances(Ty.

* used in various power switching circuit for system miniaturization and higher efficiency.
* Power switch circu.

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 650V RDS(on) （TYP)= .

F7N3

F7NM65

F7Nx

F7007N

F70ME0101D-R6WA

F70ME0101D-RDWA

F7105Q

F71612A

F71872F

F71872FG

F71882

F7202

F7207