F7N65 Key Features
- Fast Switching
- ESD Improved Capability
- Low ON Resistance(Rdson≤1.4Ω)
- Low Gate Charge(Typical Data:24nC)
- Low Reverse Transfer Capacitances(Typical:5.5pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
- Part: F7N65
- Description: 7A 650V N-channel Enhancement Mode Power MOSFET
- Manufacturer: ROUM
- Size: 1.28 MB
