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F7N65 - 7A 650V N-channel Enhancement Mode Power MOSFET

Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

Features

  • Fast Switching.
  • ESD Improved Capability.
  • Low ON Resistance(Rdson≤1.4Ω).
  • Low Gate Charge(Typical Data:24nC).
  • Low Reverse Transfer Capacitances(Typical:5.5pF).
  • 100% Single Pulse Avalanche Energy Test.
  • 100% ΔVDS Test 3.

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Datasheet Details

Part number F7N65
Manufacturer ROUM
File Size 1.28 MB
Description 7A 650V N-channel Enhancement Mode Power MOSFET
Datasheet download datasheet F7N65 Datasheet

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Other Datasheets by ROUM

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    7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 650V RDS(on) （TYP)= 1.2Ω ID = 7A 2 Features ● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤1.4Ω) ● Low Gate Charge(Typical Data:24nC) ● Low Reverse Transfer Capacitances(Typical:5.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and adaptor.
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