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I4N60 Datasheet Preview

I4N60 Datasheet

4A 600V N-channel Enhancement Mode Power MOSFET

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4N60/F4N60/I4N60/E4N60/B4N60/D4N60
4A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by
the self-aligned planar technology which reduce the
conduction loss, improve switching performance and
enhance the avalanche energy. Which accords with the
RoHS standard.
VDSS = 600V
RDS(on) TYP)= 2.1Ω
ID = 4A
2 Features
● Fast Switching
● ESD Improved Capability
● Low ON Resistance(Rdson≤2.5Ω)
● Low Gate Charge(Typical Data:14.5nC)
● Low Reverse Transfer Capacitances(Typical:4pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
TO-220C TO-220F TO-262
3 Applications
● used in various power switching circuit for system
miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
TO-263 TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25,unless otherwise noted)
Parameter
Symbol
Value
4N60/I4N60/E4N60
/B4N60/D4N60
Maximum Drian-Source DC Voltage
VDS
600
Maximum Gate-Drain Voltage
Drain Current(continuous)
VGS
IDT=25℃)
T=100℃)
±30
4
2.5
Drain Current(Pulsed)(Note 1)
Single Pulse Avalanche Energy(Note 5)
Peak Diode Recovery dv/dt(Note 6)
IDM
EAS
dv/dt
16
250
5
Total Dissipation
Ta=25
TC=25
Ptot
Ptot
2
75
Junction Temperature
storage Temperature
Tj 150
Tstg -55150
Maximum Temperature for soldering
TL
300
F4N60
2
30
Units
V
V
A
A
A
mJ
V/ns
W
W
4.2 Thermal Characteristics
Parameter
Thermal Resistance Junction to Case-sink
Thermal Resistance Junction to Ambient
Symbol
RthJC
RthJA
Value
4N60/I4N60/E4N60
/B4N60/D4N60
1.67
62.5
F4N60
4.17
62.5
Units
/W
/W
ROUM Semiconductor Technology CO.,LTD.
www.roum.cn
Page 1 of 11
Rev. 1.0




ROUM

I4N60 Datasheet Preview

I4N60 Datasheet

4A 600V N-channel Enhancement Mode Power MOSFET

No Preview Available !

4N60/F4N60/I4N60/E4N60/B4N60/D4N60
4.3 Electrical Characteristics(Tc=25,unless otherwise noted)
Parameter
Symbol
Test Condition
Value
Min Typ Max
Off Characteristics
Drain-source
Breakdown Voltage
BVDSS
ID=250μA,VGS=0V
600 --
--
Drain-to-Source
Leakage Current
IDSS
VDS=600V,VGS=0V,TC=25
VDS=480V,VGS=0V,TC=125
--
--
-- 1
-- 100
Gate-to-Source
Forward Leakage
IGSSF
VGS=+30V
-- -- 100
Gate-to-Source
Reverse Leakage
IGSSR
VGS=-30V
-- -- -100
On Characteristics(Note 3)
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250μA
2 -- 4
Drain-source on Resist
ance
RDS(on)
VGS=10V,ID=2A
-- 2.1 2.5
Dynamic Characteristics(Note 4)
Forward Transfer cond
uctance
gfs
VDS=15V,ID=2A
-- 3.5 --
Input Capacitance
Ciss
-- 590 --
Output Capacitance
Coss
Reverse Transfer Cap
acitance
Crss
Switching Characteristics(note4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
tf
VGS=0V,VDS=25V,f=1.0MHz
--
55
--
-- 4 --
ID=4A,
VDD=300V,
RG=10Ω
-- 14 --
-- 15 --
-- 34 --
-- 13 --
Total Gate Charge
Qg
-- 14.5 --
Gate-to-Source Charge
Gate-to-Drain(“Miller”)C
harge
Qgs
Qgd
ID=4A,VDD=480V,VGS=10V -- 2.6 --
-- 6.5 --
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VFSD
VGS=0V,IS=4A
-- -- 1.5
Diode Forward Current
(Note 2)
IS
-- --
4
Reverse Recovery Time
Reverse Recovery
Charge
Reverse Recovery
Current
trr
Qrr
IRRM
TJ=25,IF=4A,
dIF/dt=100A/μS,VGS=0V
-- 250 --
-- 1000 --
-- 8.03 --
Units
V
μA
μA
nA
nA
V
Ω
S
pF
nS
nC
V
A
nS
nC
A
Notes
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: Guaranteed by design, not subject to production.
5. L=10mH,ID=7.1A,VDD=50V,VGATE=650V,Start TJ=25.
6. ISD=4A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25.
ROUM Semiconductor Technology CO.,LTD.
www.roum.cn
Page 2 of 11
Rev. 1.0


Part Number I4N60
Description 4A 600V N-channel Enhancement Mode Power MOSFET
Maker ROUM
Total Page 11 Pages
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