I4N60 - 4A 600V N-channel Enhancement Mode Power MOSFET

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Datasheet Details

Part number	I4N60
Manufacturer	ROUM
File Size	1.27 MB
Description	4A 600V N-channel Enhancement Mode Power MOSFET
Datasheet	I4N60-ROUM.pdf

I4N60 Product details

Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

Fast Switching.
ESD Improved Capability.
Low ON Resistance(Rdson≤2.5Ω).
Low Gate Charge(Typical Data:14.5nC).
Low Reverse Transfer Capacitances(Typical:4pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test TO-220C TO-220F TO-262 3.

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Published: Jan 16, 2019 |