I630 Key Features
- Fast Switching
- Low ON Resistance(Rdson≤0.4Ω)
- Low Gate Charge(Typical Data:22nC)
- Low Reverse Transfer Capacitances(Typical:22pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
- Part: I630
- Description: 9A 200V N-channel Enhancement Mode Power MOSFET
- Manufacturer: ROUM
- Size: 1.32 MB
