FM25L04B
Features
4K bit Ferroelectric Nonvolatile RAM
- Organized as 512 x 8 bits
- High Endurance 100 Trillion (1014) Read/Writes
- 38 Year Data Retention (@ +75ºC)
- No Delay™ Writes
- Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface
- SPI
- Up to 20 MHz Frequency
- Direct Hardware Replacement for EEPROM
- SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme
- Hardware Protection
- Software Protection Low Power Consumption
- Low Voltage Operation 2.7-3.6V
- 200 µA Active Current (1 MHz)
- 3 µA (typ.) Standby Current Industry Standard Configuration
- Industrial Temperature -40°C to +85°C
- 8-pin “Green”/Ro HS SOIC and TDFN Packages
Description
The FM25L04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the plexities, overhead, and...
