FM25040A Datasheet | Ramtron International

Features 4K bit Ferroelectric Nonvolatile RAM - Organized as 512 x 8 bits - High Endurance 1 Trillion (1012) Read/Writes - 45 year Data Retention - No Delay™ Writes - Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI - Up to 20 MHz maximum Bus Frequency - Direct hardware replacement for EEPROM - SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme - Hardware Protection - Software Protection Low Power Consumption - 10 µA Standby Current Industry Standard Configuration - Industrial Temperature -40° C to +85° C - 8-pin SOIC (-S) - “Green” 8-pin SOIC (-G) Description The FM25040A is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 45 years while eliminating the plexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the FM25040A performs write operations at bus speed. No write delays are incurred. Data is written to the memory array in the cycle after it has been successfully transferred to the device. The next bus cycle may mence immediately without the need for data polling. In addition the product offers substantial write endurance pared with other nonvolatile memories. The FM25040A is capable of supporting up to 1012 read/write cycles -- far more than most systems will require from a serial memory. These capabilities make the FM25040A ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The FM25040A provides substantial benefits to users of serial EEPROM, in a hardware drop-in replacement. The FM25040A uses the high-speed SPI bus which enhances the high-speed write...